Through-silicon via with sidewall air gap
US8877559B2 · kind B2 · utility
6Cited by
0References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2013 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Mar 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide a novel process integration for air gap formation at the sidewalls for a Through Silicon Via (TSV) structure. The sidewall air gap formation scheme for the TSV structure of disclosed embodiments reduces parasitic capacitance and depletion regions in between the substrate silicon and TSV conductor, and serves to also reduce mechanical stress in silicon substrate surrounding the TSV conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.