Process for producing an integrated circuit

US8877622B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Thierry Poiroux · Voiron, FR
• Sebastien Barnola · Meylan, FR
• Yves Morand · Grenoble, FR

Key dates

• Filing date: Jul 22, 2011
• Grant date: Nov 4, 2014
• Expiry date: Jul 22, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0149
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process for producing an integrated circuit on the surface of a substrate, the process including: producing a first layer, including active zones and insulating zones, on the surface of the substrate; producing gate zones on the surface of the first layer, the gate zones each being surrounded by insulating spacers; producing source/drain electrodes; producing a dielectric layer between the insulating spacers, the dielectric layer having an upper surface level with the upper surfaces of the gate zones; partially etching each gate zone so as to lower the upper surface of a first part of each gate zone; and depositing an insulating dielectric layer on the first parts of the gate zones.