Providing a void-free filled interconnect structure in a layer of package substrate
US8877632B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2013 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | May 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure are directed towards techniques and configurations for providing void-free filled interconnect structures in a dielectric layer of a package assembly. In one embodiment, the method for providing a void-free filled interconnect structure may include forming a through hole through a layer of a package substrate, and depositing a conductive material to fill the through hole. Depositing the conductive material may be performed while gradually increasing a current density of the conductive material and correspondingly changing a flow rate of the conductive material. Other embodiments may be described and/or claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.