Methods of forming printable integrated circuit devices by selective etching to suspend the devices from a handling substrate and devices formed thereby
US8877648B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2010 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Dec 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming integrated circuit devices include forming a sacrificial layer on a handling substrate and forming a semiconductor active layer on the sacrificial layer. A step is performed to selectively etch through the semiconductor active layer and the sacrificial layer in sequence to define an semiconductor-on-insulator (SOI) substrate, which includes a first portion of the semiconductor active layer. A multi-layer electrical interconnect network may be formed on the SOI substrate. This multi-layer electrical interconnect network may be encapsulated by an inorganic capping layer that contacts an upper surface of the first portion of the semiconductor active layer. A step can be performed to selectively etch through the capping layer and the first portion of the semiconductor active layer to thereby expose the sacrificial layer. The sacrificial layer may be selectively removed from between the first portion of the semiconductor active layer and the handling substrate to thereby define a suspended integrated circuit chip encapsulated by the capping layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.