Variable resistance memory device and method for fabricating the same
US8878240B2 · kind B2 · utility
1Cited by
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16Claims
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Key dates
| Filing date | Sep 14, 2012 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Nov 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A variable resistance memory device that includes a first electrode, a second electrode, a variable resistance layer interposed between the first electrode and a second electrode. A metal oxide electrode is interposed between the first electrode and the variable resistance layer, and the metal oxide electrode does not include a nitrogen constituent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.