Transistors and method for making ohmic contact to transistors
US8878245B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2007 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Sep 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A transistor device having non-alloyed ohmic contacts formed by a process that improves the contact morphology and reduces metal spiking into the semiconductor layers. During fabrication, a regrowth mask is deposited on the semiconductor device. A portion of the regrowth mask and the epitaxial semiconductor layers is removed, defining areas for selective regrowth of a highly-doped semiconductor material. The remaining portion of the regrowth mask forms a regrowth mask residual layer. After regrowth, ohmic contacts are formed on the regrowth structures without the use of a high-temperature annealing process. The regrowth mask residual layer does not need to be removed, but rather remains on the device throughout fabrication and can function as a passivation layer and/or a spacer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.