Super lattice/quantum well nanowires
US8878259B2 · kind B2 · utility
4Cited by
14References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2012 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Jul 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.