Semiconductor device having SiGe substrate, interfacial layer and high K dielectric layer
US8878302B2 · kind B2 · utility
3Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2012 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Dec 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to integrated circuit fabrication, and more particularly to a semiconductor device with an interfacial layer. An exemplary structure for a semiconductor device comprises a Si1-xGex substrate, wherein the x is greater than 0.4; a Si layer over the Si1-xGex substrate; and a gate structure disposed over the Si layer, wherein the gate structure comprises a dielectric portion and an electrode portion that is disposed over the dielectric portion; wherein the dielectric portion comprises a layer of III-V material on the Si layer and a high-k dielectric layer adjacent to the electrode portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.