Magnetoresistive element and magnetic memory
US8878317B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2011 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Jun 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.