Structure and method for a MRAM device with an oxygen absorbing cap layer
US8878318B2 · kind B2 · utility
14Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2011 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Jan 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
MTJ stack structures for an MRAM device include an MTJ stack having a pinned ferromagnetic layer over a pinning layer, a tunneling barrier layer over the pinned ferromagnetic layer, a free ferromagnetic layer over the tunneling barrier layer, a conductive oxide layer over the free ferromagnetic layer, and an oxygen-based cap layer over the conductive oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.