Semiconductor memory device
US8878320B2 · kind B2 · utility
0Cited by
3References
20Claims
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Key dates
| Filing date | Mar 20, 2012 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Nov 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
Abstract
According to one embodiment, a semiconductor memory device includes plural magneto-resistance elements being two-dimensionally arrayed on a semiconductor substrate. In the semiconductor memory device, each of the magneto-resistance elements includes: a first magnetic layer formed on the semiconductor substrate; a non-magnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the non-magnetic layer, and an insulating film buried between the magneto-resistance elements adjacent to each other, a powder made of a metallic material or a magnetic material being dispersed in the insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.