Magnetoresistive element and producing method thereof
US8878321B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2012 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Jan 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
Abstract
According to one embodiment, a magnetoresistive element comprises a first magnetic layer, in which a magnetization direction is variable and is perpendicular to a film surface, a tunnel barrier layer that is formed on the first magnetic layer, and a second magnetic layer that is formed on the tunnel barrier layer, a magnetization direction of the second magnetic layer being variable and being perpendicular to the film surface. The second magnetic layer comprises a body layer that constitutes an origin of perpendicular magnetic anisotropy, and an interface layer that is formed between the body layer and the tunnel barrier layer. The interface layer has a permeability higher than that of the body layer and a planar size larger than that of the body layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.