Semiconductor device having improved RF characteristics and moisture resistance and method for manufacturing the same
US8878333B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2012 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Jan 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a semiconductor substrate having a main surface; an electrode in a device region on the main surface; a metal wiring on the main surface and having a first end connected to the electrode; an electrode pad outside the device region and spaced from the metal wiring; an air gap between the main surface and an air gap forming film on the main surface, enveloping the first end of the metal wiring and the electrode, and having a first opening; a resin closing the first opening and covering a second end of the metal wiring; a liquid repellent film facing the air gap and increasing contact angle of the resin, when liquid, relative to contact angles on the semiconductor substrate and the air gap forming film; and a metal film connecting the metal wiring to the electrode pad through a second opening located in the resin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.