Using alloy electrodes to dope memristors
US8878342B2 · kind B2 · utility
0Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2009 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Jul 17, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/762
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Various embodiments of the present invention are direct to nanoscale, reconfigurable, memristor devices. In one aspect, a memristor device comprises an electrode (301,303) and an alloy electrode (502,602). The device also includes an active region (510,610) sandwiched between the electrode and the alloy electrode. The alloy electrode forms dopants in a sub-region of the active region adjacent to the alloy electrode. The active region can be operated by selectively positioning the dopants within the active region to control the flow of charge carriers between the electrode and the alloy electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.