Non-volatile memory cell containing an in-cell resistor
US8879299B2 · kind B2 · utility
4Cited by
7References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2012 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Jun 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory cell includes a first electrode, a steering element, a metal oxide storage element located in series with the steering element, a dielectric resistor located in series with the steering element and the metal oxide storage element, and a second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.