Memory cell with Schottky diode
US8879314B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 6, 2011 |
| Grant date | Nov 4, 2014 |
| Priority date | — |
| Expiry date | Jan 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Memory cell comprising two conductors, with a serially connected magnetic storage element and a Schottky diode between the two conductors. The Schottky diode provides a unidirectional conductive path between the two conductors and through the element. The Schottky diode is formed between a metal layer in one of the two conductors and a processed junction layer. Methods for process and for operation of the memory cell are also disclosed. The memory cell using the Schottky diode can be designed for high speed operation and with high density of integration. Advantageously, the junction layer can also be used as a hard mask for defining the individual magnetic storage element in the memory cell. The memory cell is particularly useful for magnetic random access memory (MRAM) circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.