MEMS nanostructures and methods of forming the same
US8883021B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2012 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | Jun 12, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/44791
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of forming of MEMS nanostructures includes a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A light reflecting layer is deposited over the substrate thereby covering the top surface and the sidewall surface of each mesa. A protection layer is formed over the light reflecting layer. An ARC layer is formed over the protection layer. An opening in a photo resist layer is formed over the ARC layer over each mesa. A portion of the ARC layer, the protection layer and the light reflecting layer are removed through the opening to expose the top surface of each mesa. The photo resist layer and the ARC layer over the top surface of each mesa are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.