Patent · US Active

Methods of rejuvenating sputtering targets

US8883250B2 · kind B2 · utility

10Cited by

152References

15Claims

0Family size

Assignee

H.C. STARCK INC. · US

Inventors

Steven A. Miller · Pinellas Park, US
Prabhat Kumar · Framingham, US
Rong-Chein Richard Wu · Taipei, TW
Shuwei Sun · Framingham, US
Stefan Zimmermann · Laufenbürg, DE
Olaf Schmidt-Park · Krefeld, DE

Key dates

Filing date	Jun 18, 2013
Grant date	Nov 11, 2014
Priority date	—
Expiry date	Jun 18, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/332
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and comprising a sputtering-target material is provided, the sputtering-target material (i) comprising a metal, (ii) defining a recessed furrow therein, and (iii) having a first grain size and a first crystalline microstructure. A powder is spray-deposited within the furrow to form a layer therein, the layer (i) comprising the metal, (ii) having a second grain size finer than the first grain size, and (iii) having a second crystalline microstructure more random than the first crystalline microstructure. Spray-depositing the powder within the furrow forms a distinct boundary line between the layer and the sputtering-target material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.