Decoupling composite capacitor in a semiconductor wafer

US8883605B2 · kind B2 · utility

Assignee

• Broadcom Corporation · US

Inventors

• Xiangdong Chen · Irvine, US
• Wei Xia · Hangzhou City, CN

Key dates

• Filing date: Jul 26, 2013
• Grant date: Nov 11, 2014
• Expiry date: Jul 26, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/13
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

According to an exemplary embodiment, a method for fabricating a decoupling composite capacitor in a wafer that includes a dielectric region overlying a substrate includes forming a through-wafer via in the dielectric region and the substrate. The through-wafer via includes a through-wafer via insulator covering a sidewall and a bottom of a through-wafer via opening and a through-wafer via conductor covering the through-wafer via insulator. The method further includes thinning the substrate, forming a substrate backside insulator, forming an opening in the substrate backside insulator to expose the through-wafer via conductor, and forming a backside conductor on the through-wafer via conductor, such that the substrate backside conductor extends over the substrate backside insulator, thereby forming the decoupling composite capacitor. The substrate forms a first decoupling composite capacitor electrode and the through-wafer via conductor and substrate backside conductor form a second decoupling composite capacitor electrode.