Patent · US Active

Method for manufacturing a semiconductor structure

US8883609B2 · kind B2 · utility

0Cited by

1References

12Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Mathias Plappert · Finkenstein, AT
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Nov 21, 2013
Grant date	Nov 11, 2014
Priority date	—
Expiry date	Nov 21, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

According to an embodiment, a method for manufacturing a semiconductor structure includes providing a first monocrystalline semiconductor portion having a first lattice constant in a reference direction and forming a second monocrystalline semiconductor portion having a second lattice constant in the reference direction, which is different to the first lattice constant, on the first monocrystalline semiconductor portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.