Solution and method for activating the oxidized surface of a semiconductor substrate
US8883641B2 · kind B2 · utility
4Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2010 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | Nov 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a solution and a method for activating the oxidized surface of a substrate, in particular of a semiconducting substrate, for its subsequent coating by a metal layer deposited by the electroless method.According to the invention, this composition contains:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.