Semiconductor devices and methods of manufacturing the same
US8883651B2 · kind B2 · utility
6Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2012 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | Jul 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/015
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a transistor of a semiconductor device, the method including forming a gate pattern on a semiconductor substrate, forming a spacer on a sidewall of the gate pattern, wet etching the semiconductor substrate to form a first recess in the semiconductor substrate, wherein the first recess is adjacent to the spacer, and wet etching the first recess to form a second recess in the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.