Patent · US Active

Silicon etching liquid and etching method

US8883652B2 · kind B2 · utility

1Cited by
0References
9Claims
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Key dates

Filing dateSep 22, 2008
Grant dateNov 11, 2014
Priority date
Expiry dateMay 24, 2030

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C1/00539
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A silicon etching liquid characterized by anisotropically dissolving monocrystalline silicon therein by using an aqueous solution containing a quaternary ammonium hydroxide and an aminoguanidine salt and an etching method of silicon using the instant etching liquid are an etching liquid and an etching method enabling one to perform processing at a high etching rate in etching processing of silicon, particularly in etching processing of silicon in a manufacturing process of MEMS parts or semiconductor devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.