Optoelectronic semiconductor chip and method for producing same

US8884311B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Werner Bergbauer · Windberg, DE
• Lutz Höppel · Alteglofsheim, DE
• Philipp Drechsel · Regensburg, DE
• Christopher Kölper · Regensburg, DE
• Martin Straβburg · Donaustauf, DE
• Patrick Rode · Regensburg, DE

Key dates

• Filing date: Apr 29, 2011
• Grant date: Nov 11, 2014
• Expiry date: Apr 29, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of the nanostructures including at least one substructure.