Semiconductor light-emitting device
US8884323B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2013 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | Mar 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
Abstract
A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a buffer layer, a light-emitting layer, a first-conductivity semiconductor layer, a first light reflecting layer, a protective structure, and an adhesive layer. The first-conductivity semiconductor layer is disposed between the buffer layer and a first side of the light-emitting layer. The first light reflecting layer is disposed between the first-conductivity semiconductor layer and the buffer layer. The protective structure is disposed between the first reflecting layer and the buffer layer. The adhesive layer is disposed between the first-conductivity semiconductor layer and the protective structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.