Method for manufacturing a memory cell, a method for manufacturing a memory cell arrangement, and a memory cell

US8884352B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Danny Pak-Chum Shum · Poughkeepsie, US
• Christoph Bukethal · Dresden, DE
• Martin Stiftinger · Stockdorf, DE
• John Power · Kilmacthomas, IE

Key dates

• Filing date: Oct 8, 2012
• Grant date: Nov 11, 2014
• Expiry date: Oct 8, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/681

Abstract

A method for manufacturing a memory cell in accordance with various embodiments may include: forming at least one charge storing memory cell structure over a substrate, the charge storing memory cell structure having a first sidewall and a second sidewall opposite the first sidewall; forming an electrically conductive layer over the substrate and the charge storing memory cell structure; patterning the electrically conductive layer to form a spacer at the first sidewall and a blocking structure at the second sidewall of the charge storing memory cell structure; implanting first dopant atoms to form a first doped region in the substrate proximate the spacer, wherein the first dopant atoms are blocked by the blocking structure; removing the blocking structure after implanting the first dopant atoms; implanting second dopant atoms to form a second doped region in the substrate proximate the second sidewall of the charge storing memory cell structure.