Nonvolatile semiconductor memory device and method for manufacturing same
US8884355B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2010 |
| Grant date | Nov 11, 2014 |
| Priority date | — |
| Expiry date | Jun 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
Abstract
A nonvolatile semiconductor memory device includes: a stacked structural unit including a plurality of electrode films and a plurality of inter-electrode insulating films alternately stacked in a first direction; a first selection gate electrode stacked on the stacked structural unit in the first direction; a first semiconductor pillar piercing the stacked structural unit and the first selection gate electrode in the first direction; a first memory unit provided at an intersection of each of the electrode films and the first semiconductor pillar; and a first selection gate insulating film provided between the first semiconductor pillar and the first selection gate electrode, the first selection gate electrode including a first silicide layer provided on a face of the first selection gate electrode perpendicular to the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.