Apparatus for plasma processing and method for plasma processing
US8888950B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2008 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Jul 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0209
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.