Plasma etching method
US8889024B2 · kind B2 · utility
15Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2014 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Apr 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etching method that can improve an etching selection ratio of a film to be etched to a film different from the film to be etched compared with the related art is provided. The present invention provides a plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, in which plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing similar components as components of the different film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.