Method for formation of siliceous film and siliceous film formed by the method
US8889229B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2009 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Sep 13, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24612
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for formation of a siliceous film containing nitrogen in a low concentration. The method according to the present invention comprises the steps of: applying a polysilazane composition on an engraved substrate surface, to form a coating layer; hardening the coating layer only in the part adjacent to the substrate surface, to form a covering film along the shape of the engraved substrate; and removing the polysilazane composition of the coating layer in the part not hardened in the above covering film-formation step. According to this method, two or more siliceous films can be formed and layered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.