Method and apparatus for etching the silicon oxide layer of a semiconductor substrate
US8889563B2 · kind B2 · utility
3Cited by
0References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 10, 2011 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Aug 27, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/117
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An aspect of the invention is to provide a method and apparatus for etching the silicon oxide layer of a semiconductor substrate, whereby the processing time for cleaning or rinsing, as well as any undesired aftereffects by residual hydrofluoric acid, may be reduced, in using the dry etching method involving the use of dense carbon dioxide that contains hydrofluoric acid, during the manufacturing process of a micro-electronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.