Apparatus and methods for low K dielectric layers
US8889567B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2011 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Sep 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for a low k dielectric layer of porous SiCOH. A method includes placing a semiconductor substrate into a vapor deposition chamber; introducing reactive gases into the vapor deposition chamber to form a dielectric film comprising SiCOH and a decomposable porogen; depositing the dielectric film to have a ratio of Si—CH3 to SiOnetwork bonds of less than or equal to 0.25; and performing a cure for a cure time to remove substantially all of the porogen from the dielectric film. In one embodiment the porogen comprises a cyclic hydrocarbon. The porogen may be UV curable. In embodiments, different lowered Si—CH3 to SiOnetwork ratios for the deposition of the dielectric film are disclosed. An apparatus of a semiconductor device including the low k dielectric layers is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.