Cleaning formulations and method of using the cleaning formulations
US8889609B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2012 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Apr 26, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A water-rich hydroxylamine formulation for photoresist and post-etch/post-ash residue removal in applications wherein a semiconductor substrate comprises aluminum. The cleaning composition comprises from about 2 to about 15% by wt. of hydroxylamine; from about 50 to about 80% by wt. of water; from about 0.01 to about 5.0% by wt. of a corrosion inhibitor; from about 5 to about 45% by wt. of a component selected from the group consisting of: an alkanolamine having a pKa<9.0, a water-miscible solvent, and a mixture thereof. Employment of such composition exhibits efficient cleaning capability for Al substrates, minimal silicon etch while protecting aluminum for substrates comprising both materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.