Method of forming polycrystalline silicon layer, thin film transistor, organic light emitting diode display device having the same, and methods of fabricating the same
US8890165B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2010 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Apr 1, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a polycrystalline silicon layer, a thin film transistor (TFT), an organic light emitting diode (OLED) display device having the same, and methods of fabricating the same. The method of forming a polycrystalline silicon layer includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer on the buffer layer, forming a groove in the amorphous silicon layer, forming a capping layer on the amorphous silicon layer, forming a metal catalyst layer on the capping layer, and annealing the substrate and crystallizing the amorphous silicon layer into a polycrystalline silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.