Nanostructured light-emitting device
US8890184B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2012 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Feb 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A nanostructured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures each including a first type semiconductor nano-core grown in a three-dimensional (3D) shape on the first type semiconductor layer, an active layer formed to surround a surface of the first type semiconductor nano-core, and a second type semiconductor layer formed to surround a surface of the active layer and including indium (In); and at least one flat structure layer including a flat-active layer and a flat-second type semiconductor layer that are sequentially formed on the first type semiconductor layer parallel to the first type semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.