Strained channel dynamic random access memory devices
US8890226B2 · kind B2 · utility
1Cited by
3References
19Claims
0Family size
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Key dates
| Filing date | May 2, 2013 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | May 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/09
Abstract
DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.