Lateral power MOSFET structure and method of manufacture
US8890244B2 · kind B2 · utility
2Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 6, 2010 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Dec 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A lateral power MOSFET with a low specific on-resistance is described. Stacked P-top and N-grade regions in patterns of articulated circular arcs separate the source and drain of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.