Electrostatic discharge protection structure
US8890250B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2012 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Feb 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
Abstract
An electrostatic discharge protection structure includes a semiconductor substrate, a first well region, a gate structure, a second well region, a second well region, a second conductive region, and a deep well region. The first well region contains first type conducting carriers. The second well region is disposed within the first well region, and contains second type conducting carriers. The first conductive region is disposed on the surface of the first well region, and contains the second type conducting carriers. The deep well region is disposed under the second well region and the first conductive region, and contacted with the second well region. The deep well region contains the second type conducting carriers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.