Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface

US8890264B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Gilbert Dewey · Beaverton, US
• Robert S. Chau · Beaverton, US
• Marko Radosavljevic · Portland, US
• Han Wui Then · Portland, US
• Scott B. Clendenning · Portland, US
• Ravi Pillarisetty · Portland, US

Key dates

• Filing date: Sep 26, 2012
• Grant date: Nov 18, 2014
• Expiry date: Sep 26, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/85
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A high-k gate dielectric interface with a group III-V semiconductor surface of a non-planar transistor channel region is non-directionally doped with nitrogen. In nanowire embodiments, a non-directional nitrogen doping of a high-k gate dielectric interface is performed before or concurrently with a conformal gate electrode deposition through exposure of the gate dielectric to liquid, vapor, gaseous, plasma, or solid state sources of nitrogen. In embodiments, a gate electrode metal is conformally deposited over the gate dielectric and an anneal is performed to uniformly accumulate nitrogen within the gate dielectric along the non-planar III-V semiconductor interface.