Electrochromic tungsten oxide film deposition
US8894827B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2012 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Jun 17, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/083
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A deposition method for electrochromic WOx films involves cyclic deposition of very thin poisoned and metallic tungsten oxide layers to build up a film with a desired general stoichiometry with x in the range of 3>x>2.75. The method may include: charging a deposition chamber with oxygen gas to poison a tungsten metal target; initiating sputtering of the target while reducing the oxygen partial pressure being supplied to the chamber and pumping the chamber; sputtering target for time t1+t2 to form first and second tungsten oxide layers, where the first layer is deposited during time t1 from a poisoned target and the second layer is deposited during time t2 from a metallic target, and where the stoichiometry of the film comprising the first and second layers is a function of t1 and t2; and, repeating until a desired film thickness is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.