Patent · US Active

Substrate containing aperture and methods of forming the same

US8894868B2 · kind B2 · utility

6Cited by
10References
33Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 6, 2011
Grant dateNov 25, 2014
Priority date
Expiry dateNov 21, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/24273
  • WIPO fieldMachine tools
  • WIPO sectorMechanical engineering

Abstract

A method of forming an aperture (e.g., a through via, a blind via, a trench, an alignment feature, etc.) within a substrate includes irradiating a substrate with a laser beam to form a laser-machined feature having a sidewall. The laser-machined feature is then processed to change at least one characteristic (e.g., the sidewall surface roughness, diameter, taper, aspect ratio, cross-sectional profile, etc.) of the laser-machined feature. The laser-machined feature can be processed to form the aperture by performing an isotropic wet-etch process employing an etchant solution containing HNO3, HF and, optionally acetic acid.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.