Impurity-induced disorder in III-nitride materials and devices
US8895335B1 · kind B1 · utility
3Cited by
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11Claims
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Key dates
| Filing date | Jul 26, 2012 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Sep 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/146
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.
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