Heterojunction subcells in inverted metamorphic multijunction solar cells
US8895342B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2012 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Dec 21, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
Inverted metamorphic multijunction solar cells having a heterojunction middle subcell and a graded interlayer, and methods of making same, are disclosed herein. The present disclosure provides a method of manufacturing a solar cell using an MOCVD process, wherein the graded interlayer is composed of (InxGa1-x)yAl1-yAs, and is formed in the MOCVD reactor so that it is compositionally graded to lattice match the middle second subcell on one side and the lower third subcell on the other side, with the values for x and y computed and the composition of the graded interlayer determined so that as the layer is grown in the MOCVD reactor, the band gap of the graded interlayer remains constant at 1.5 eV throughout the thickness of the graded interlayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.