Die preparation for wafer-level chip scale package (WLCSP)
US8895363B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/94
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Consistent with an example embodiment, there is a method for assembling a wafer level chip scale processed (WLCSP) device from a wafer substrate, the method comprises grinding the back-side of the wafer substrate to a prescribed thickness. A plurality of trenches is sawed along a plurality of device die boundaries on a back-side surface of the wafer, the trenches having a bevel profile. The plurality of trenches is etched until the bevel profile of the plurality of trenches is rounded.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.