Patent · US Active

Die preparation for wafer-level chip scale package (WLCSP)

US8895363B2 · kind B2 · utility

3Cited by
0References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 15, 2013
Grant dateNov 25, 2014
Priority date
Expiry dateMar 15, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/94
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Consistent with an example embodiment, there is a method for assembling a wafer level chip scale processed (WLCSP) device from a wafer substrate, the method comprises grinding the back-side of the wafer substrate to a prescribed thickness. A plurality of trenches is sawed along a plurality of device die boundaries on a back-side surface of the wafer, the trenches having a bevel profile. The plurality of trenches is etched until the bevel profile of the plurality of trenches is rounded.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.