Reducing contact resistance for field-effect transistor devices
US8895417B2 · kind B2 · utility
16Cited by
6References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 29, 2011 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Feb 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method and an apparatus for doping at least one of a graphene and a nanotube thin-film transistor field-effect transistor device to decrease contact resistance with a metal electrode. The method includes selectively applying a dopant to a metal contact region of at least one of a graphene and a nanotube field-effect transistor device to decrease the contact resistance of the field-effect transistor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.