Semiconductor device and method for producing a semiconductor device
US8895418B2 · kind B2 · utility
2Cited by
4References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2012 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Aug 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One embodiment describes a method of manufacturing a semiconductor device. Here, impurities are implanted into a semiconductor body via a first side of the semiconductor body. Thereafter, a drift zone layer on the first side of the semiconductor body is formed. The following is an ablation of the semiconductor body from a second side of the semiconductor body and up to pn junction defined by impurities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.