Peter Irsigler
57Patents
3h-index
75Co-inventors
65Inventor score
Filing activity: Mar 26, 2012 → May 25, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9417186B2 | Opto-electronic sensor | Physics | 9 | Active |
| US9735243B2 | Semiconductor device, integrated circuit and method of forming a semiconductor device | Electricity | 4 | Active |
| US9212045B1 | Micro mechanical structure and method for fabricating the same | Electricity | 4 | Active |
| US9269713B2 | Semiconductor device and method for producing the same | Electricity | 3 | Active |
| US9287377B2 | Semiconductor device and manufacturing method | Electricity | 3 | Active |
| US9419080B2 | Semiconductor device with recombination region | Electricity | 2 | Active |
| US9761548B1 | Bond pad structure | Electricity | 2 | Active |
| US8895418B2 | Semiconductor device and method for producing a semiconductor device | Electricity | 2 | Active |
| US9281359B2 | Semiconductor device comprising contact trenches | Electricity | 2 | Active |
| US10566426B2 | Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer | Electricity | 2 | Active |
| US9618693B2 | Liquid sensing systems and methods using a ring resonator sensor | Physics | 1 | Active |
| US8941188B2 | Semiconductor arrangement with a superjunction transistor and a further device integrated in a common semiconductor body | Electricity | 1 | Active |
| US10081533B2 | Micromechanical structure and method for fabricating the same | Electricity | 1 | Active |
| US8956960B2 | Method for stress reduced manufacturing semiconductor devices | Electricity | 1 | Active |
| US9903816B2 | Photonic crystal sensor structure and a method for manufacturing the same | Physics | 1 | Active |
| US9419130B2 | Semiconductor device and integrated circuit | Electricity | 1 | Active |
| US9029243B2 | Method for producing a semiconductor device and field-effect semiconductor device | Emerging Cross-Sectional Technologies | 1 | Active |
| US10553675B2 | Isolation of semiconductor device with buried cavity | Electricity | 1 | Active |
| US9679774B2 | Method for removing crystal originated particles from a crystalline silicon body | Electricity | 1 | Active |
| US11193885B2 | Gas sensor | Physics | 1 | Active |
| US9939331B2 | System and method for a capacitive thermometer | Physics | 0 | Active |
| US10403556B2 | Semiconductor device including a heat sink structure | Emerging Cross-Sectional Technologies | 0 | Active |
| US9716227B2 | Method of forming a graphene structure | Emerging Cross-Sectional Technologies | 0 | Active |
| US9748374B2 | Semiconductor device having a field-effect structure and a nitrogen concentration profile | Emerging Cross-Sectional Technologies | 0 | Active |
| US11081382B2 | Method for processing a substrate assembly and wafer composite structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.