Method for forming a multi-level surface on a substrate with areas of different wettability and a semiconductor device having the same
US8895438B2 · kind B2 · utility
6Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2009 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Jul 7, 2030 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB29C2059/023
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
The invention relates to a method 10 for forming a multi-level surface on a substrate 2, wherein said surface comprises areas of different wettability, the method comprising the step (A, B) of applying a multi-level stamp to the substrate for forming the multi-level surface, said multi-level stamp having different structural regions 1a arranged along the multi-level surface for locally altering wettability properties of at least a portion of a level of the multi-level surface 2a, 2b. The invention further relates to a semiconductor device and a method for manufacturing a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.