Semiconductor light-emitting device and fabricating method thereof
US8896007B2 · kind B2 · utility
1Cited by
3References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 7, 2013 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Jan 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A semiconductor light-emitting device comprises a light-emitting epitaxial structure, a first electrode structure, a light reflective layer and an resistivity-enhancing structure. The light-emitting epitaxial structure has a first surface and a second surface opposite to the first surface. The first electrode structure is electrically connected to the first surface. The light reflective layer is disposed adjacent to the second surface. The resistivity-enhancing structure is disposed adjacent to the light reflective layer and away from the second surface corresponding to a position of the first electrode structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.