Spin hall effect assisted spin transfer torque magnetic random access memory
US8896041B2 · kind B2 · utility
13Cited by
5References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 15, 2013 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Aug 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/101
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments are directed to providing a spin hall effect (SHE) assisted spin transfer torque magnetic random access memory (STT-MRAM) device by coupling a magnetic tunnel junction (MTJ) to a SHE material, and coupling the SHE material to a transistor. Embodiments are directed to a spin transfer torque magnetic random access memory (STT-MRAM) device comprising: a magnetic tunnel junction (MTJ) coupled to a spin hall effect (SHE) material, and a transistor coupled to the SHE material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.